Calculation of capacitances of silicon micro-strip sensors with a two dimensional numerical solution of the Laplace's equation
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Pre-published on:
February 11, 2020
Published on:
September 14, 2020
Abstract
In this work the results obtained with a calculation, in lower order, of backplane and interstrip capacitances in planar silicon microstrip sensors is presented. The method is based on a numerical solution of the 2D Laplace equation by partitioning the device in one dimension while keeping the other dimension continuous. The validity of the two-dimensional algorithm is checked through a comparison with experimental measurements and TCAD simulation performed on Multi Geometry Strip Sensors (MSSD).
DOI: https://doi.org/10.22323/1.373.0059
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Copyright owned by the author(s) under the term of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Copyright owned by the author(s) under the term of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.