Recent Developments of SOI Pixel Devices
K. Hara*, D. Sekigawa, S. Endo, W. Aoyagi, S. Honda, T. Tsuboyama, M. Yamada, S. Ono, M. Togawa, Y. Ikegami, Y. Arai, I. Kurachi, T. Miyoshi, J. Haba and K. Hanagaki
Pre-published on:
July 31, 2018
Published on:
December 05, 2018
Abstract
Development and application of Silicon-on-Insulator (SOI) monolithic pixel devices has been significantly boosted in recent years. After a brief review of the recent SOI development activities in various sciences, we detail the test-beam results achieving a sub-micron spatial resolution, 0.65 m, first time by a semi-conductor device, with Fine-Pixel Detector (FPIX) which has a pixel size of 8x8 m pixel size and thickness of 500 m. Another device SOFIST with pixels of 20x20 m and thickness of 500m showed a spatial resolution of ~1.2 m. Thinner devices as required for the ILC experiment are expected to be an excellent candidate even with reduced signal-to-noise ratio.
DOI: https://doi.org/10.22323/1.309.0035
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